 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FPD2250 1.5W POWER PHEMT FEATURES: * * * * 32 dBm Linear Output Power at 12 GHz 7.5 dB Power Gain at 12 GHz 42 dBm Output IP3 45% Power-Added Efficiency Datasheet v3.0 LAYOUT: GENERAL DESCRIPTION: The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 2250 m Schottky barrier gate, defined by high -resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD2250 is also available in the low cost plastic SOT89 package. TYPICAL APPLICATIONS: * * * * Narrowband and broadband highperformance amplifiers SATCOM uplink transmitters PCS/Cellular low-voltage high-efficiency output amplifiers Medium-haul digital radio transmitters ELECTRICAL SPECIFICATIONS1: PARAMETER Power at 1dB Gain Compression Maximum Stable Gain (S21/S12) Power Gain at P1dB Power-Added Efficiency Output Third-Order Intercept Point (from 15 to 5 dB below P1dB) Saturated Drain-Source Current IDSS SYMBOL P1dB MSG G1dB PAE IP3 CONDITIONS VDS = 8 V; IDS = 50% IDSS VDS = 8 V; IDS = 50% IDSS VDS = 8 V; IDS = 50% IDSS VDS = 8 V; IDS = 50% IDSS; POUT = P1dB VDS = 8 V; IDS = 50% IDSS Matched for optimal power; Tuned for best IP3 VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS +1 V VDS = 1.3 V; VGS = 0 V VGS = -5 V VDS = 1.3 V; IDS = 2.25 mA IGS = 2.25 mA IGD = 2.25 mA VDS > 6V MIN 31.0 8.0 6.5 TYP 32.0 9.0 7.5 45 40 42 MAX UNITS dBm dB dB % dBm 560 700 825 mA Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistivity (see Notes) IMAX GM IGSO |VP| |VBDGS| |VBDGD| JC 1125 600 10 1.0 12.0 14.5 14.0 16.0 30 mA mS A V V V C/W Note:1 TAmbient = 22C; RF specifications measured at f = 12 GHz using CW signal 1 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FPD2250 Datasheet v3.0 ABSOLUTE MAXIMUM RATING : PARAMETER Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power Channel Operating Temperature Storage Temperature Total Power Dissipation 4 Simultaneous Combination of Limits 2 or more Max. Limits 80% 1 SYMBOL VDS VGS IDS IG PIN TCH TSTG PTOT TEST CONDITIONS 6 -3V < VGS < -0.5V 0V < VDS < +8V For VDS > 2V Forward or reverse current Under any acceptable bias state Under any acceptable bias state Non-Operating Storage See De-Rating Note below ABSOLUTE MAXIMUM 10V -3V IDss 20mA 26.5dBm 175C -65C to 150C 5.0W Notes: 1 TAmbient = 22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device 2 Total Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power 3 Total Power Dissipation to be de-rated as follows above 22C: PTOT= 5.0 - (0.033W/C) x THS where THS= heatsink or ambient temperature above 22C Example: For a 85C carrier temperature: PTOT = 5.0 - (0.033 x (85 - 22)) = 2.9W 4 Users should avoid exceeding 80% of 2 or more Limits simultaneously 5 Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib. 6 Operating at absolute maximum VD continuously is not recommended. If operation at 10V is considered then IDS must be reduced in order to keep the part within it's thermal power dissipation limits. Therefore VGS is restricted to < -0.5V. PAD LAYOUT: PAD DESCRIPTION PIN COORDINATES (m) 130, 460 130, 220 380, 450 380, 230 A1 A1 B1 A1 A2 B1 Gate Pad Gate Pad Drain Pad Drain Pad Source Pad A2 C B2 B2 C Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening DIE SIZE (m) 470 x 680 DIE THICKNESS (m) 75 MIN. BOND PAD OPENING (m x m ) 85 x 60 2 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FPD2250 Datasheet v3.0 PREFERRED ASSEMBLY INSTRUCTIONS: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-290C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire. Stage temperature should be 250-260C. ORDERING INFORMATION: PART NUMBER FPD2250 DESCRIPTION Die HANDLING PRECAUTIONS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0-250 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters, and device model are available on request. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. 3 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com |
Price & Availability of FPD2250
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |